Publication Information

Title:
In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
Type:
Journal
Info:
Journal of The Electrochemical Society, 158 (4) G97-G102 (2011)
Date:
2010-12-30

Author Information

Name Institution
Chih-Chieh ChangNational Chiao Tung University
Fu-Ming PanNational Chiao Tung University

Films

Plasma RuNx


Plasma Ru


Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Adhesion
Analysis: Pull-off tensile test

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Substrates

SiO2

Keywords

Interconnect

Notes

687