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In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating

Type:
Journal
Info:
Journal of The Electrochemical Society, 158 (4) G97-G102 (2011)
Date:
2010-12-30
DOI:
http://dx.doi.org/10.1149/1.3554734

Author Information

Name Institution
Chih-Chieh ChangNational Chiao Tung University
Fu-Ming PanNational Chiao Tung University

Films

Plasma RuNx

Hardware used: Custom
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
H2, Hydrogen
CAS#: 1333-74-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 200C

Plasma Ru

Hardware used: Custom
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-6500F

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Digital Instruments Nanoscope E

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG 350

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Bede D1

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Technai F20

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: Thermo VG 350

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: Cameca ION-TOF

Characteristic: Adhesion
Analysis: Pull-off tensile test
Diagnostic: Custom

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4156B Semiconductor Parameter Analyzer

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Napson RT-80

Substrates

SiO2

Notes

687