Copper-ALD Seed Layer as an Enabler for Device Scaling

Type:
Conference Proceedings
Info:
ECS Transactions, 41 (2) 33-39 (2011)
Date:
2011-08-01

Author Information

Name Institution
Jiajun MaoState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany
Vincent OmarjeeAir Liquide
Andrey KorolevAir Liquide
Christian DussarratAir Liquide

Films

Plasma Cu


Film/Plasma Properties

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Adhesion
Analysis: Custom

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Substrates

SiO2
Ta
TaN
Ru

Notes

682