Publication Information

Title: Copper-ALD Seed Layer as an Enabler for Device Scaling

Type: Conference Proceedings

Info: ECS Transactions, 41 (2) 33-39 (2011)

Date: 2011-08-01

DOI: http://dx.doi.org/10.1149/1.3633652

Author Information

Name

Institution

State University of New York at Albany

State University of New York at Albany

Air Liquide

Air Liquide

Air Liquide

Films

Deposition Temperature Range = 30-100C

0-0-0

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Precursor Characterization

TGA, Thermo Gravimetric Analysis

-

Thickness

SEM, Scanning Electron Microscopy

Carl-Zeiss LEO 1550

Thickness

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Perkin Elmer 660

Resistivity, Sheet Resistance

Four-point Probe

Signatone QuadPro S-A8

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Digital Instruments Nanoscope III

Adhesion

Custom

Custom

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

-

Substrates

SiO2

Ta

TaN

Ru

Keywords

Seed Layer

Notes

682



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