Publication Information

Title:
Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
Type:
Journal
Info:
Plasma Science and Technology, Vol.20, No.3, 2018
Date:
2017-11-23

Author Information

Name Institution
Yuqing XiongLanzhou Institute of Physics
Hengjiao GaoLanzhou Institute of Physics
Ni RenLanzhou Institute of Physics
Zhongwei LiuBeijing Institute of Graphic Communication

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Glass

Keywords

Metallic Thin Films

Notes

Compares RF and ECR plasmas.
Iodoethane was used to increase the Cu deposition rate.
Plasma left on for entire deposition for some RF and all ECR experiments. These would not really be PEALD.
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