Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth

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Publication Information

Title: Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth

Type: Journal

Info: Journal of Vacuum Science & Technology A 33, 060603 (2015)

Date: 2015-06-24

DOI: http://dx.doi.org/10.1116/1.4926382

Author Information

Name

Institution

Triratna Muneshwar

University of Alberta

Ken Cadien

University of Alberta

Films

Plasma ZrN using Kurt J Lesker ALD-150LX

Deposition Temperature = 150C

TDMAZ, Tetrakis[(DiMethyl)Amido] Zirconium, [Me₂N]₄Zr

19756-04-8

Where to buy precursor

Nitrogen, N₂

7727-37-9

Hydrogen, H₂

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000D

Resistivity, Sheet Resistance

van der Pauw sheet resistance

Keithley 4200-SCS

Substrates

Si(111)

SiO₂

Keywords

Notes

369

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