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200 Films Compositions

271 Precursors and Plasma Gases

76 Deposition Hardwares

249 Film and Plasma Characteristics

Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth

Type:

Journal

Info:

Journal of Vacuum Science & Technology A 33, 060603 (2015)

Date:

2015-06-24

DOI:

http://dx.doi.org/10.1116/1.4926382

Author Information

Name	Institution
Triratna Muneshwar	University of Alberta
Kenneth C. Cadien	University of Alberta

Films

Plasma ZrN

Hardware used: Kurt J Lesker ALD-150LX

TDMAZr, (Me₂N)₄Zr, [(CH₃)₂N]₄Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide

CAS#: 19756-04-8

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N₂, Nitrogen

CAS#: 7727-37-9

H₂, Hydrogen

CAS#: 1333-74-0

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Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Thickness

Analysis: Ellipsometry

Diagnostic: J.A. Woollam M-2000D

Characteristic: Resistivity, Sheet Resistance

Analysis: van der Pauw sheet resistance

Diagnostic: Keithley 4200-SCS

Substrates

Si(111)
SiO₂

Keywords

Notes

369

The publication database currently has 1603 entries.

Search from:

200 Films Compositions

271 Precursors and Plasma Gases

76 Deposition Hardwares

249 Film and Plasma Characteristics

85 Theses

Search 1603 plasma ALD publications by: 200 Films Compositions 271 Precursors and Plasma Gases 76 Deposition Hardwares 249 Film and Plasma Characteristics