Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth

Publication Information

Title: Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth

Type: Journal

Info: Journal of Vacuum Science & Technology A 33, 060603 (2015)

Date: 2015-06-24

DOI: http://dx.doi.org/10.1116/1.4926382

Author Information

Name

Institution

Triratna Muneshwar

University of Alberta

Ken Cadien

University of Alberta

Films

Plasma ZrN using Kurt J Lesker ALD-150LX

Deposition Temperature = 150C

TDMAZr, (Me₂N)₄Zr, [(CH₃)₂N]₄Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide

19756-04-8

Where to buy precursor

N₂, Nitrogen

7727-37-9

H₂, Hydrogen

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000D

Resistivity, Sheet Resistance

van der Pauw sheet resistance

Keithley 4200-SCS

Substrates

Si(111)

SiO₂

Keywords

Notes

369

Follow @PlasmaALDGuy

Mark Sowa

Shortcuts

Films

Precursors

Deposition Hardware

Authors

Film and Plasma Characteristics

Multi-factor Search

ALD and PEALD Background

On-line PEALD Theses

About plasma-ald.com

ALD Links