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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 33, 060603 (2015)
Date:
2015-06-24
Author Information
| Name | Institution |
|---|---|
| Triratna Muneshwar | University of Alberta |
| Kenneth C. Cadien | University of Alberta |
Films
Plasma ZrN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: van der Pauw sheet resistance
Substrates
| Si(111) |
| SiO2 |
Keywords
Notes
| 369 |