Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 33, 060603 (2015)
Date:
2015-06-24
DOI:
http://dx.doi.org/10.1116/1.4926382

Author Information

Name Institution
Triratna MuneshwarUniversity of Alberta
Kenneth C. CadienUniversity of Alberta

Films

Plasma ZrN

Hardware used: Kurt J Lesker ALD-150LX
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
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N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Resistivity, Sheet Resistance
Analysis: van der Pauw sheet resistance
Diagnostic: Keithley 4200-SCS

Substrates

Si(111)
SiO2

Notes

369