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Low Thermal Budget Heteroepitaxial Gallium Oxide Thin Films Enabled by Atomic Layer Deposition
From Precursor Chemistry to Gas Sensors: Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications
Atomic layer deposition of thin films as model electrodes: A case study of the synergistic effect in Fe2O3-SnO2
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Publication Information
Title:
Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 33, 060603 (2015)
Date:
2015-06-24
Author Information
| Name | Institution |
|---|---|
| Triratna Muneshwar | University of Alberta |
| Kenneth C. Cadien | University of Alberta |
Films
Plasma ZrN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: van der Pauw sheet resistance
Substrates
| Si(111) |
| SiO2 |
Keywords
Notes
| 369 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |