Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition

Type:
Journal
Info:
Materials Science and Engineering C 16 2001 59-64
Date:
2001-10-08

Author Information

Name Institution
Chang-Wook JeongSeoul National University
Byung-il LeeSeoul National University
Seung-Ki JooSeoul National University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon
SiO2
Co

Notes

1699