Low temperature hydrogen plasma-assisted atomic layer deposition of copper studied using in situ infrared reflection absorption spectroscopy

Type:
Journal
Info:
J. Vac. Sci. Technol. A 32(1), Jan/Feb 2014, 01A108
Date:
2013-11-04
DOI:
http://dx.doi.org/10.1116/1.4831915

Author Information

Name Institution
Rohan P. ChaukulkarColorado School of Mines
Nick F. W. ThissenEindhoven University of Technology
Vikrant R. RaiColorado School of Mines
Sumit AgarwalColorado School of Mines

Films

Plasma Cu

Hardware used: Custom
copper(II) hexafluoroacetylacetonate, Cu(HFAC)2
CAS#: 155640-85-0
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 80C

Plasma Cu

Hardware used: Custom
copper(II) hexafluoroacetylacetonate, Cu(HFAC)2
CAS#: 155640-85-0
Where to buy precursor
D2, Deuterium
CAS#: 7782-39-0
Deposition Temperature = 80C

Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy
Diagnostic: Custom

Substrates

Al2O3

Notes

10