Effects of Hydrogen Plasma Treatments on the Atomic Layer Deposition of Copper

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 11 (5) H107-H110 (2008)
Date:
2008-01-08
DOI:
http://dx.doi.org/10.1149/1.2844207

Author Information

Name Institution
Liqi WuState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany

Films

Plasma Cu

Hardware used: TEL Phoenix CVD cluster tool
copper(II) acetylacetonate, bis(2,4-pentanedionato) copper(II), cupric acetylacetonate, Cu(acac)2
CAS#: 13395-16-9
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H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 85C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: LEO 1550

Characteristic: Continuity
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: LEO 1550

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 200CX

Characteristic: Continuity
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 200CX

Characteristic: Chemical Composition, Impurities
Analysis: NRA, Nuclear Reaction Analysis
Diagnostic: -

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: Perkin Elmer PHI600

Characteristic: Morphology, Roughness, Topography
Analysis: XRD, X-Ray Diffraction
Diagnostic: Scintag XDS 2000

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Thermomicroscopes Autoprobe CPResearch system

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Signatone SYS-301 resistivity probing system

Substrates

SiO2
Ru

Notes

1337