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Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
Type:
Journal
Info:
Journal of Crystal Growth 455 (2016) 157 - 160
Date:
2016-10-11
Author Information
| Name | Institution |
|---|---|
| V. A. Tarala | North-Caucasus Federal University |
| M. Ambartsumov | North-Caucasus Federal University |
| A. S. Altakhov | North-Caucasus Federal University |
| V. Ya. Martens | North-Caucasus Federal University |
| M. Yu. Shevchenko | North-Caucasus Federal University |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Substrates
| Si(100) |
| Si(111) |
| Sapphire |
Notes
| 940 |