Growing c-axis oriented aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures

Type:
Journal
Info:
Journal of Crystal Growth 455 (2016) 157 - 160
Date:
2016-10-11
DOI:
http://dx.doi.org/10.1016/j.jcrysgro.2016.10.015

Author Information

Name Institution
V. A. TaralaNorth-Caucasus Federal University
M. AmbartsumovNorth-Caucasus Federal University
A. S. AltakhovNorth-Caucasus Federal University
V. Ya. MartensNorth-Caucasus Federal University
M. Yu. ShevchenkoNorth-Caucasus Federal University

Films

Plasma AlN

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
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N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range = 210-250C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Thermo Fisher ARL X'TRA

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: FSM-1201 FTIR

Substrates

Si(100)
Si(111)
Sapphire

Notes

940