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Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties

Type:
Journal
Info:
Thin Solid Films 441 (2003) 311 - 316
Date:
2003-05-30
DOI:
https://doi.org/10.1016/S0040-6090(03)00883-6

Author Information

Name Institution
Hyungjun KimIBM
S. M. RossnagelIBM

Films

Plasma Ta

Hardware used: Custom Remote Inductively Coupled Plasma
TaCl5, Tantalum Pentachloride
CAS#: 7721-01-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 25-300C

Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: EG&G Optical Multichannel Analyzer III

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: Inficon Quadrex 200

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: FRES, Forward Recoil Elastic Spectrometry
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Microstructure
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Si(001)
SiO2

Notes

1233