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Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 43(2) 2025 020401
Date:
2024-12-04
DOI:
http://dx.doi.org/10.1116/6.0004180

Author Information

Name Institution
Gilbert B. RaynerKurt J. Lesker Company
Noel O'TooleKurt J. Lesker Company
Bangzhi LiuThe Pennsylvania State University
Jeffrey ShallenbergerThe Pennsylvania State University
Jiadi ZhuMIT
Tomas PalaciosMIT
Piush BeheraMIT
Suraj CheemaMIT
Blaine JohsFilm Sense LLC
Nicholas A. StrnadU.S. Army Research Laboratory

Films

Plasma ScN

Hardware used: Kurt J Lesker ALD-150LX
(EtCp)2ScCl, Bis(ethylcyclopentadienyl)scandium chloride
CAS#: 2845240-61-9
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 200-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Film Sense FS-8

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Film Sense FS-8

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Versaprobe III

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Gemini 500

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall effect/van der Pauw method
Diagnostic: -

Characteristic: Mobility
Analysis: Hall effect/van der Pauw method
Diagnostic: -

Characteristic: Carrier Concentration
Analysis: Hall effect/van der Pauw method
Diagnostic: -

Substrates

Silicon
Sapphire
MgO

Notes

1732