Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
Type:
Journal
Info:
Journal of The Electrochemical Society, 150 (10) C740-C744 (2003)
Date:
2003-09-02
Author Information
Name | Institution |
---|---|
Do-Heyoung Kim | Chonnam National University |
Young Jae Kim | Chonnam National University |
Yo Soon Song | Chonnam National University |
Byung-Teak Lee | Chonnam National University |
Jin Hyeok Kim | Chonnam National University |
Seigi Suh | Harvard University |
Roy Gordon | Harvard University |
Films
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Oxidation Resistance
Analysis: Four-point Probe
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Substrates
SiO2 |
Notes
52 |