Publication Information

Title: Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten

Type: Journal

Info: Journal of The Electrochemical Society, 150 (10) C740-C744 (2003)

Date: 2003-09-02

DOI: http://dx.doi.org/10.1149/1.1610000

Author Information

Name

Institution

Chonnam National University

Chonnam National University

Chonnam National University

Chonnam National University

Chonnam National University

Harvard University

Harvard University

Films

Plasma WC using Custom

Deposition Temperature Range N/A

406462-43-9

7727-37-9

1333-74-0

Plasma WC using Custom

Deposition Temperature Range N/A

406462-43-9

7727-37-9

Plasma WC using Custom

Deposition Temperature Range N/A

406462-43-9

1333-74-0

Thermal WC using Custom

Deposition Temperature Range N/A

406462-43-9

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

-

Oxidation Resistance

Four-point Probe

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Thickness

XRR, X-Ray Reflectivity

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

52



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