Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma

Type:
Journal
Info:
J. Mater. Chem. C, 2015, 3, 4848-4851
Date:
2015-04-20

Author Information

Name Institution
Matthias M. MinjauwGhent University
Jolien DendoovenGhent University
Boris CaponGhent University
Marc SchaekersIMEC
Christophe DetavernierGhent University

Films

Plasma Ru


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Pt
Si-H
Polypropylene
Polyethylene
Polystyrene

Notes

509