Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma

Type:
Journal
Info:
J. Mater. Chem. C, 2015, 3, 4848-4851
Date:
2015-04-20
DOI:
http://dx.doi.org/10.1039/C5TC00751H

Author Information

Name Institution
Matthias M. MinjauwGhent University
Jolien DendoovenGhent University
Boris CaponGhent University
Marc SchaekersIMEC
Christophe DetavernierGhent University

Films

Plasma Ru

Hardware used: Custom
RuO4, ruthenium tetroxide, Air Liquide ToRuSTM
CAS#: 20427-56-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range = 50-100C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Advance

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Advance

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension Edge

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: FEI Quanta 200 FEG

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Substrates

Pt
Si-H
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Polyethylene
Polystyrene

Notes

509