Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

Contact us for more information.


RuO4, ruthenium tetroxide, Air Liquide ToRuSTM, CAS# 20427-56-9

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 3 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma
2Mobile setup for synchrotron based in situ characterization during thermal and plasma-enhanced atomic layer deposition
3Shuffling Atomic Layer Deposition Gas Sequences to Modulate Bimetallic Thin Films and Nanoparticle Properties