Publication Information

Title:
Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
Type:
Journal
Info:
Chem. Mater., 2009, 21 (12), pp 2386–2396
Date:
2009-05-12

Author Information

Name Institution
Byung Joon ChoiSeoul National University
Seol ChoiSeoul National University
Taeyong EomSeoul National University
Seung Wook RyuSeoul National University
Deok-Yong ChoSeoul National University
Jaeyeong HeoSeoul National University
Hyeong Joon KimSeoul National University
Cheol Seong HwangHynix Semiconductor
Yoon Jung KimHynix Semiconductor

Films

Plasma Ge


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XRF, X-Ray Fluorescence

Characteristic: Areal Density
Analysis: XRF, X-Ray Fluorescence

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

SiO2
Si3N4
TiO2
ZrO2
HfO2
TiN

Keywords

Nucleation

Notes

25