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Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition

Type:
Journal
Info:
Chem. Mater., 2009, 21 (12), pp 2386–2396
Date:
2009-05-12
DOI:
http://dx.doi.org/10.1021/cm803369b

Author Information

Name Institution
Byung Joon ChoiSeoul National University
Seol ChoiSeoul National University
Taeyong EomSeoul National University
Seung Wook RyuSeoul National University
Deok-Yong ChoSeoul National University
Jaeyeong HeoSeoul National University
Hyeong Joon KimSeoul National University
Cheol Seong HwangHynix Semiconductor
Yoon Jung KimHynix Semiconductor

Films

Plasma Ge

Hardware used: Quros Plus 200
TetraIsoButyl Germanium, TIBGe, Ge(i-C4H9)4
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 110-200C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XRF, X-Ray Fluorescence
Diagnostic: -

Characteristic: Areal Density
Analysis: XRF, X-Ray Fluorescence
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM-3000F

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: JEOL JSPM-5200

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG Sigma Probe

Substrates

SiO2
Si3N4
TiO2
ZrO2
HfO2
TiN

Notes

25