Publication Information

Title: Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition

Type: Journal

Info: Chem. Mater., 2009, 21 (12), pp 2386–2396

Date: 2009-05-12

DOI: http://dx.doi.org/10.1021/cm803369b

Author Information

Name

Institution

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Hynix Semiconductor

Hynix Semiconductor

Films

Plasma Ge using Quros Plus 200

Deposition Temperature Range = 110-200C

0-0-0

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XRF, X-Ray Fluorescence

Unknown

Areal Density

XRF, X-Ray Fluorescence

Unknown

Thickness

SEM, Scanning Electron Microscopy

Hitachi S-4800 Field Emission Scanning Electron Microscope

Thickness

TEM, Transmission Electron Microscope

JEOL JEM-3000F

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

JEOL JSPM-5200

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

Hitachi S-4800 Field Emission Scanning Electron Microscope

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MPD X-ray Diffractometer

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

Thermo VG Sigma Probe

Substrates

SiO2

Si3N4

TiO2

ZrO2

HfO2

TiN

Keywords

Nucleation

Notes

25



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