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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
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  • Surface cleaning
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Highly-Conformal Amorphous W-Si-N Thin Films by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization

Type:
Journal
Info:
J. Phys. Chem. C, 2015, 119 (3), pp 1548-1556
Date:
2014-12-29
DOI:
http://dx.doi.org/10.1021/jp510226g

Author Information

Name Institution
Soo-Hyun KimYenunnam University

Films

Plasma WSiN

Hardware used: NCD Technology Lucida MP-100
bis(tert-butylimido)bis(bis(trimethylsilylamido))tungsten(VI), [W(NtBu)2{N(SiMe3)2}2]
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Notes

228