Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces

Type:
Journal
Info:
Applied Surface Science 130-132 (1998) 352-356
Date:
1997-09-28
DOI:
https://doi.org/10.1016/S0169-4332(98)00083-X

Author Information

Name Institution
Shin YokoyamaHiroshima University
Norihiko IkedaHiroshima University
Kouji KajikawaHiroshima University
Yoshimitsu NakashimaHiroshima University

Films

Plasma SiNx

Hardware used: Custom Hot-wire
Hexachlorodisilane, Si2Cl6
CAS#: 13465-77-5
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H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 375C

Film/Plasma Properties

Characteristic: Wet Etch Resistance
Analysis: -
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Selectivity
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: -

Substrates

Si(100)
Si3N4

Notes

1634