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Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces
Type:
Journal
Info:
Applied Surface Science 130-132 (1998) 352-356
Date:
1997-09-28
Author Information
| Name | Institution |
|---|---|
| Shin Yokoyama | Hiroshima University |
| Norihiko Ikeda | Hiroshima University |
| Kouji Kajikawa | Hiroshima University |
| Yoshimitsu Nakashima | Hiroshima University |
Films
Plasma SiNx
Film/Plasma Properties
Characteristic: Wet Etch Resistance
Analysis: -
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Selectivity
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Substrates
| Si(100) |
| Si3N4 |
Notes
| 1634 |