Remote Plasma ALD of Platinum and Platinum Oxide Films
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 12 (7) G34-G36 (2009)
Date:
2009-04-27
Author Information
| Name | Institution |
|---|---|
| Harm C. M. Knoops | Eindhoven University of Technology |
| Adriaan J. M. Mackus | Eindhoven University of Technology |
| Merijn E. Donders | Eindhoven University of Technology |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Peter H. L. Notten | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Dielectric Constant, Permittivity
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
| Si(100) |
| SiO2 |
Notes
| Pt and PtO2 can be distinguished by very different dielectric functions from ellipsometry. Also PtO2 very resistive. |
| 67 |