Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films

Type:
Journal
Info:
J. Vac. Sci. Technol. B 40(5) Sep/Oct 2022
Date:
2022-07-06

Author Information

Name Institution
Antony Premkumar PeterIMEC
Alfonso Sepulveda MarquezIMEC
Johan MeersschautIMEC
Praveen DaraIMEC
Timothee BlanquartASM Belgium
Takayama TomomiASM Japan
Ebisudani TaishiASM Japan
Shiba ElichiroASM Japan
Yosuke KimuraIMEC
Sander van GompelIMEC
Pierre MorinIMEC

Films

Plasma SiNx


Plasma SiNx

Hardware used: ASM Eagle XP8


CAS#: 7727-37-9

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Uniformity
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Mass Gain
Analysis: -

Characteristic: Chemical Binding
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Wet Etch Resistance
Analysis: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Substrates

Silicon

Notes

Silicon precursor not explicitly stated, inferred from references.
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