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Effect of rapid thermal annealing on the mechanical stress and physico-chemical properties in plasma enhanced atomic layer deposited silicon nitride thin films

Type:
Journal
Info:
J. Vac. Sci. Technol. B 40(5) Sep/Oct 2022
Date:
2022-07-06
DOI:
http://dx.doi.org/10.1116/6.0001922

Author Information

Name Institution
Antony Premkumar PeterIMEC
Alfonso Sepulveda MarquezIMEC
Johan MeersschautIMEC
Praveen DaraIMEC
Timothee BlanquartASM Belgium
Takayama TomomiASM Japan
Ebisudani TaishiASM Japan
Shiba ElichiroASM Japan
Yosuke KimuraIMEC
Sander van GompelIMEC
Pierre MorinIMEC

Films

Plasma SiNx

Hardware used: ASM Eagle XP8
Diiodosilane, H2I2Si
CAS#: 13760-02-6
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 500C

Plasma SiNx

Hardware used: ASM Eagle XP8
Diiodosilane, H2I2Si
CAS#: 13760-02-6
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 500C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: KLA-Tencor Aleris

Characteristic: Uniformity
Analysis: Ellipsometry
Diagnostic: KLA-Tencor Aleris

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: KLA-Tencor Aleris

Characteristic: Mass Gain
Analysis: -
Diagnostic: Metrix Mentor 300

Characteristic: Chemical Binding
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Nicolet 6700

Characteristic: Wet Etch Resistance
Analysis: -
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Digital Instruments Nanoscope Multimode V

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Substrates

Silicon

Notes

Silicon precursor not explicitly stated, inferred from references.
1745