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Self-limiting diamond growth from alternating CF_x and H fluxes

Type:

Journal

Info:

Diamond and Related Materials 7 (1998) 1087-1094

Date:

1997-12-10

DOI:

https://doi.org/10.1016/S0925-9635(98)00167-8

Author Information

Name	Institution
S.F. Komarov	Rensselaer Polytechnic Institute (RPI)
J.-J. Lee	Rensselaer Polytechnic Institute (RPI)
J.B. Hudson	Rensselaer Polytechnic Institute (RPI)
M.P. D'Evelyn	Rensselaer Polytechnic Institute (RPI)

Films

Plasma Diamond

Hardware used: Custom Hot-wire

CF₄, Tetrafluoromethane, Carbon Tetrafluoride

CAS#: 75-73-0

H₂, Hydrogen

CAS#: 1333-74-0

Deposition Temperature Range = 710-760C

Film/Plasma Properties

Characteristic: Thickness

Analysis: SEM, Scanning Electron Microscopy

Diagnostic: -

Characteristic: Images