Self-limiting diamond growth from alternating CFx and H fluxes

Type:
Journal
Info:
Diamond and Related Materials 7 (1998) 1087-1094
Date:
1997-12-10
DOI:
https://doi.org/10.1016/S0925-9635(98)00167-8

Author Information

Name Institution
S.F. KomarovRensselaer Polytechnic Institute (RPI)
J.-J. LeeRensselaer Polytechnic Institute (RPI)
J.B. HudsonRensselaer Polytechnic Institute (RPI)
M.P. D'EvelynRensselaer Polytechnic Institute (RPI)

Films

Plasma Diamond

Hardware used: Custom Hot-wire
CF4, Tetrafluoromethane, Carbon Tetrafluoride
CAS#: 75-73-0
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H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range = 710-760C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Mo
Diamond

Notes

1689