Publication Information

Title: Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics

Type: Conference Proceedings

Info: ASMC 2015 - SEMI Advanced Semiconductor Manufacturing Conference

Date: 2015-05-03

DOI: http://asmc2015.conferencespot.org/57461-semi-1.2058836/t-001-1.2059455/f-005-1.2059456/a-029-1.2059514/an-029-1.2059515

Author Information

Name

Institution

State University of New York at Albany

State University of New York at Albany

State University of New York at Albany

Films

Deposition Temperature Range = 120-250C

1287-13-4

1277-43-6

7664-41-7

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Thickness

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Thickness

AES, Auger Electron Spectroscopy

-

Resistivity, Sheet Resistance

Four-point Probe

-

Substrates

SiO2

Keywords

Notes

626



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