Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 041506 (2016)
Date:
2016-05-16
DOI:
http://dx.doi.org/10.1116/1.4953029

Author Information

Name Institution
Mikael BroasAalto University
Perttu SippolaAalto University
Timo SajavaaraUniversity of Jyväskylä
Vesa VuorinenAalto University
Alexander Pyymaki PerrosAalto University
Harri LipsanenAalto University
Mervi Paulasto-KröckelAalto University

Films

Plasma AlN

Hardware used: Picosun R200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
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N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Plasmos SD 2300

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Plasmos SD 2300

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Titan G2

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Technai F20

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Hydrogen Desorption
Analysis: TDS, Thermal Desorption Spectroscopy
Diagnostic: -

Substrates

Si(100)

Notes

792