Publication Information

Title:
Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
Type:
Journal
Info:
2015 Appl. Phys. Express 8 045801
Date:
2015-02-26

Author Information

Name Institution
Kyeong-Keun ChoiPohang University of Science and Technology (POSTECH)
Jong KeePohang University of Science and Technology (POSTECH)
Chan Gyung ParkPohang University of Science and Technology (POSTECH)
Deok-Kee KimSejong University

Films

Plasma Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: APT, Atom Probe Tomography

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Silicon

Keywords

Notes

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