Publication Information

Title: Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures

Type: Journal

Info: 2015 Appl. Phys. Express 8 045801

Date: 2015-02-26

DOI: http://dx.doi.org/10.7567/APEX.8.045801

Author Information

Name

Institution

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Sejong University

Films

Plasma Al2O3 using Quros Plus 200

Deposition Temperature Range = 150-300C

75-24-1

7782-44-7

Plasma Al2O3 using Quros Plus 200

Deposition Temperature Range = 150-300C

75-24-1

7782-44-7

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

TEM, Transmission Electron Microscope

JEOL 2100F

Images

TEM, Transmission Electron Microscope

JEOL 2100F

Interfacial Layer

TEM, Transmission Electron Microscope

JEOL 2100F

Thickness

ELS, EELS, Electron Energy Loss Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

Unknown

Chemical Composition, Impurities

SIMS, Secondary Ion Mass Spectrometry

CAMECA IMS 6F

Chemical Composition, Impurities

APT, Atom Probe Tomography

FEI Nova 600i Nanolab

Breakdown Voltage

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Capacitance

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Fixed Charge

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Substrates

Silicon

Keywords

Notes

467



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