In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2020, 12 (14), pp 16639-16647
Date:
2020-03-18
Author Information
| Name | Institution |
|---|---|
| Alexander Campbell Kozen | U.S. Naval Research Laboratory |
| Zachary R. Robinson | The College at Brockport SUNY |
| Evan R. Glaser | U.S. Naval Research Laboratory |
| Mark Twigg | U.S. Naval Research Laboratory |
| Thomas Larrabee | U.S. Naval Research Laboratory |
| Hans Cho | U.S. Naval Research Laboratory |
| Sharka M. Prokes | U.S. Naval Research Laboratory |
| Laura B. Ruppalt | U.S. Naval Research Laboratory |
Films
Thermal Nb2O5
Other Nb2O5
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Optical Properties
Analysis: UV-VIS Spectroscopy
Characteristic: Band Gap
Analysis: UV-VIS Spectroscopy
Characteristic: Memristor Characteristics
Analysis: -
Substrates
| Sapphire |
| Si(100) |
Notes
| 1629 |