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In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2020, 12 (14), pp 16639-16647
Date:
2020-03-18

Author Information

Name Institution
Alexander Campbell KozenU.S. Naval Research Laboratory
Zachary R. RobinsonThe College at Brockport SUNY
Evan R. GlaserU.S. Naval Research Laboratory
Mark TwiggU.S. Naval Research Laboratory
Thomas LarrabeeU.S. Naval Research Laboratory
Hans ChoU.S. Naval Research Laboratory
Sharka M. ProkesU.S. Naval Research Laboratory
Laura B. RuppaltU.S. Naval Research Laboratory

Films

Thermal Nb2O5


Other Nb2O5

Hardware used: Beneq TFS-200


CAS#: 7732-18-5

CAS#: 1333-74-0

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Optical Properties
Analysis: UV-VIS Spectroscopy

Characteristic: Band Gap
Analysis: UV-VIS Spectroscopy

Characteristic: Memristor Characteristics
Analysis: -

Substrates

Sapphire
Si(100)

Notes

1629