Publication Information

Title: Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications

Type: Journal

Info: J. Vac. Sci. Technol. B 27(2)., Mar/Apr 2009

Date: 2009-03-20

DOI: http://dx.doi.org/10.1116/1.3097856

Author Information

Name

Institution

State University of New York at Albany

State University of New York at Albany

State University of New York at Albany

Films

Deposition Temperature Range N/A

0-0-0

7664-41-7

0-0-0

1333-74-0

Deposition Temperature Range N/A

0-0-0

7664-41-7

Deposition Temperature Range N/A

0-0-0

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

Thermo VG-Scientific theta probe

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Veeco Autoprobe CP

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

Hitachi S-4800 Field Emission Scanning Electron Microscope

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Dynamitron linear particle accelerator

Microstructure

TEM, Transmission Electron Microscope

JEOL 2010F

Conformality, Step Coverage

TEM, Transmission Electron Microscope

JEOL 2010F

Barrier Characteristics

TVS, Triangle Voltage Sweep

-

Resistivity, Sheet Resistance

Unknown

-

Substrates

SiO2

Keywords

Diffusion Barrier

Copper Electroplating

Notes

115



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