Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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High performance graphene field effect transistors on an aluminum nitride substrate with high surface phonon energy

Type:
Journal
Info:
APPLIED PHYSICS LETTERS 104, 193112 (2014)
Date:
2014-05-05
DOI:
http://dx.doi.org/10.1063/1.4878316

Author Information

Name Institution
Joong Gun OhKorea Advanced Institute of Science and Technology

Films

Plasma AlN

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 250C

Film/Plasma Properties

Substrates

Notes

229