Plasma-Enhanced Atomic Layer Deposition of Ni
Type:
Journal
Info:
Japanese Journal of Applied Physics 49 (2010) 05FA11
Date:
2009-12-24
Author Information
| Name | Institution |
|---|---|
| Han-Bo-Ram Lee | Pohang University of Science and Technology (POSTECH) |
| Sung-Hwan Bang | Pohang University of Science and Technology (POSTECH) |
| Woo-Hee Kim | Pohang University of Science and Technology (POSTECH) |
| Gil-Ho Gu | Pohang University of Science and Technology (POSTECH) |
| Young-Kuk Lee | Korea Research Institute of Chemical Technology |
| Taek-Mo Chung | Korea Research Institute of Chemical Technology |
| Chang Gyoun Kim | Korea Research Institute of Chemical Technology |
| Chan Gyung Park | Pohang University of Science and Technology (POSTECH) |
| Hyungjun Kim | Pohang University of Science and Technology (POSTECH) |
Films
Plasma Ni
Plasma Ni
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Substrates
| Si(001) |
| SiO2 |
Notes
| Si(001) cleaned in buffered oxide etch + deionized water rinse + N2 drying. |
| SiO2 cleaned in acetone, isopropyl alcohol, deionized water, and nitrogen drying. |
| 29 |