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Publication Information

Title: Plasma-Enhanced Atomic Layer Deposition of Ni

Type: Journal

Info: Japanese Journal of Applied Physics 49 (2010) 05FA11

Date: 2009-12-24

DOI: http://dx.doi.org/10.1143/JJAP.49.05FA11

Author Information

Name

Institution

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Korea Research Institute of Chemical Technology

Pohang University of Science and Technology (POSTECH)

Pohang University of Science and Technology (POSTECH)

Films

Plasma Ni using Quros Plus 150

Deposition Temperature Range = 150-300C

942311-35-5

7664-41-7

Plasma Ni using Quros Plus 150

Deposition Temperature Range = 150-300C

942311-35-5

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Chemical Composition, Impurities

ELS, EELS, Electron Energy Loss Spectroscopy

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Thickness

SEM, Scanning Electron Microscopy

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Substrates

Si(001)

SiO2

Keywords

Notes

Si(001) cleaned in buffered oxide etch + deionized water rinse + N2 drying.

SiO2 cleaned in acetone, isopropyl alcohol, deionized water, and nitrogen drying.

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