Publication Information

Title:
Plasma-Enhanced Atomic Layer Deposition of Ni
Type:
Journal
Info:
Japanese Journal of Applied Physics 49 (2010) 05FA11
Date:
2009-12-24

Author Information

Name Institution
Han-Bo-Ram LeePohang University of Science and Technology (POSTECH)
Sung-Hwan BangPohang University of Science and Technology (POSTECH)
Woo-Hee KimPohang University of Science and Technology (POSTECH)
Gil-Ho GuPohang University of Science and Technology (POSTECH)
Young-Kuk LeeKorea Research Institute of Chemical Technology
Taek-Mo ChungKorea Research Institute of Chemical Technology
Chang Gyoun KimKorea Research Institute of Chemical Technology
Chan Gyung ParkPohang University of Science and Technology (POSTECH)
Hyungjun KimPohang University of Science and Technology (POSTECH)

Films

Plasma Ni


Plasma Ni


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Substrates

Si(001)
SiO2

Keywords

Notes

Si(001) cleaned in buffered oxide etch + deionized water rinse + N2 drying.
SiO2 cleaned in acetone, isopropyl alcohol, deionized water, and nitrogen drying.
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