Publication Information

Title:
A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
Type:
Journal
Info:
Materials Letters, Volume 168, Pages 218 - 222
Date:
2016-01-16

Author Information

Name Institution
Jun Beom KimYeungnam University
Byeonghyeon JangYeungnam University
Hyun-Jung LeeYeungnam University
Won Seok HanUP Chemical
Do-Joong LeeBrown University
Han-Bo-Ram LeeIncheon National University
Tae Eun HongKorean Basic Science Institute
Soo-Hyun KimYeungnam University

Films

Plasma WN


Plasma WC


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Resistivity, Sheet Resistance
Analysis: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Substrates

SiO2

Keywords

Notes

620