
A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
Type:
Journal
Info:
Materials Letters, Volume 168, Pages 218 - 222
Date:
2016-01-16
Author Information
Name | Institution |
---|---|
Jun Beom Kim | Yeungnam University |
Byeonghyeon Jang | Yeungnam University |
Hyun-Jung Lee | Yeungnam University |
Won Seok Han | UP Chemical |
Do-Joong Lee | Brown University |
Han-Bo-Ram Lee | Incheon National University |
Tae Eun Hong | Korean Basic Science Institute |
Soo-Hyun Kim | Yeungnam University |
Films
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Resistivity, Sheet Resistance
Analysis: -
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: -
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Substrates
SiO2 |
Notes
620 |