Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
Type:
Journal
Info:
Chem. Mater., 2013, 25 (7), pp 1132-1138
Date:
2013-03-14
Author Information
Name | Institution |
---|---|
Jason P. Coyle | Carleton University |
Gangotri Dey | Tyndall National Institute, University College Cork |
Eric R. Sirianni | University of Delaware |
Marianna Kemell | University of Helsinki |
Glenn P. A. Yap | University of Delaware |
Mikko K. Ritala | University of Helsinki |
Markku A. Leskelä | University of Helsinki |
Simon D. Elliott | Tyndall National Institute, University College Cork |
Sean T. Barry | Carleton University |
Films
Plasma Cu
Plasma Cu
Film/Plasma Properties
Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Thickness
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Substrates
Si(100) |
Notes
Considerable physical data of the precursors are presented. |
The 4,5-dimethyl... precursor did not deposit Cu at the conditions considered while the other precursor did. |
Gases purified with an Aeronex GateKeeper and Entegris GateKeeper purifiers. |
81 |