Publication Information

Title:
Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
Type:
Journal
Info:
Chem. Mater., 2013, 25 (7), pp 1132-1138
Date:
2013-03-14

Author Information

Name Institution
Jason P. CoyleCarleton University
Gangotri DeyTyndall National Institute, University College Cork
Eric R. SirianniUniversity of Delaware
Marianna KemellUniversity of Helsinki
Glenn P. A. YapUniversity of Delaware
Mikko K. RitalaUniversity of Helsinki
Markku A. LeskeläUniversity of Helsinki
Simon D. ElliottTyndall National Institute, University College Cork
Sean T. BarryCarleton University

Films



Film/Plasma Properties

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Thickness
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Substrates

Si(100)

Keywords

Copper

Notes

Considerable physical data of the precursors are presented.
The 4,5-dimethyl... precursor did not deposit Cu at the conditions considered while the other precursor did.
Gases purified with an Aeronex GateKeeper and Entegris GateKeeper purifiers.
81