Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry

Type:
Journal
Info:
Applied Surface Science 328 (2015) 344 - 348
Date:
2014-12-08
DOI:
http://dx.doi.org/10.1016/j.apsusc.2014.12.044

Author Information

Name Institution
Triratna MuneshwarUniversity of Alberta
Kenneth C. CadienUniversity of Alberta

Films

Plasma ZrN

Hardware used: Kurt J Lesker ALD-150LX
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
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N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Dielectric Constant, Permittivity
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Substrates

Silicon

Keywords

Notes

In situ ellipsometry study of ZrN PEALD with Kurt J. Lesker ALD150LX.
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