Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry

Publication Information

Title: Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry

Type: Journal

Info: Applied Surface Science 328 (2015) 344 - 348

Date: 2014-12-08

DOI: http://dx.doi.org/10.1016/j.apsusc.2014.12.044

Author Information

Name

Institution

Triratna Muneshwar

University of Alberta

Ken Cadien

University of Alberta

Films

Plasma ZrN using Kurt J Lesker ALD-150LX

Deposition Temperature = 150C

TDMAZr, (Me₂N)₄Zr, [(CH₃)₂N]₄Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide

19756-04-8

Where to buy precursor

N₂, Nitrogen

7727-37-9

H₂, Hydrogen

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000D

Dielectric Constant, Permittivity

Ellipsometry

J.A. Woollam M-2000D

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Kratos Analytical Axis Ultra DLD

Substrates

Silicon

Keywords

Notes

In situ ellipsometry study of ZrN PEALD with Kurt J. Lesker ALD150LX.

341

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