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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
Type:
Journal
Info:
Applied Surface Science 328 (2015) 344 - 348
Date:
2014-12-08
Author Information
| Name | Institution |
|---|---|
| Triratna Muneshwar | University of Alberta |
| Kenneth C. Cadien | University of Alberta |
Films
Plasma ZrN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Dielectric Constant, Permittivity
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Silicon |
Keywords
Notes
| In situ ellipsometry study of ZrN PEALD with Kurt J. Lesker ALD150LX. |
| 341 |