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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
Type:
Journal
Info:
Applied Surface Science 328 (2015) 344 - 348
Date:
2014-12-08
Author Information
| Name | Institution |
|---|---|
| Triratna Muneshwar | University of Alberta |
| Kenneth C. Cadien | University of Alberta |
Films
Plasma ZrN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Dielectric Constant, Permittivity
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Silicon |
Keywords
Notes
| In situ ellipsometry study of ZrN PEALD with Kurt J. Lesker ALD150LX. |
| 341 |