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Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry

Type:

Journal

Info:

Applied Surface Science 328 (2015) 344 - 348

Date:

2014-12-08

DOI:

http://dx.doi.org/10.1016/j.apsusc.2014.12.044

Author Information

Name	Institution
Triratna Muneshwar	University of Alberta
Kenneth C. Cadien	University of Alberta

Films

Plasma ZrN

Hardware used: Kurt J Lesker ALD-150LX

TDMAZr, (Me₂N)₄Zr, [(CH₃)₂N]₄Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide

CAS#: 19756-04-8

CAS#: 7727-37-9

CAS#: 1333-74-0

Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Thickness

Analysis: Ellipsometry

Diagnostic: J.A. Woollam M-2000D

Characteristic: Dielectric Constant, Permittivity

Analysis: Ellipsometry

Diagnostic: J.A. Woollam M-2000D

Characteristic: Chemical Composition, Impurities

Analysis: XPS, X-ray Photoelectron Spectroscopy

Diagnostic: Kratos Analytical Axis Ultra DLD

Substrates

Silicon

Notes

In situ ellipsometry study of ZrN PEALD with Kurt J. Lesker ALD150LX.
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