Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Atomic layer epitaxy of germanium

Type:
Journal
Info:
Applied Surface Science 82-83 (1994) 380-386
Date:
1994-06-30
DOI:
https://doi.org/10.1016/0169-4332(94)90245-3

Author Information

Name Institution
Satoshi SugaharaTokyo Institute of Technology
Takuya KitamuraTokyo Institute of Technology
Toshinori ImaiTokyo Institute of Technology
Masakiyo MatsumuraTokyo Institute of Technology

Films

Plasma Ge

Hardware used: Custom Hot-wire
DMG, Dimethylgermane, Me2GeH2
CAS#: 1449-64-5
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 480C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: -

Substrates

Ge
SiO2

Notes

1600