Atomic layer epitaxy of germanium
Type:
Journal
Info:
Applied Surface Science 82-83 (1994) 380-386
Date:
1994-06-30
Author Information
| Name | Institution |
|---|---|
| Satoshi Sugahara | Tokyo Institute of Technology |
| Takuya Kitamura | Tokyo Institute of Technology |
| Toshinori Imai | Tokyo Institute of Technology |
| Masakiyo Matsumura | Tokyo Institute of Technology |
Films
Plasma Ge
Film/Plasma Properties
Characteristic: Thickness
Analysis: Profilometry
Substrates
| Ge |
| SiO2 |
Notes
| 1600 |