Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD

Type:
Conference Proceedings
Info:
ECS Transactions, 33 (12) 125-135 (2010)
Date:
2010-07-08
DOI:
http://dx.doi.org/10.1149/1.3501039

Author Information

Name Institution
Jiajun MaoState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany
Vincent OmarjeeAir Liquide
Andrey KorolevAir Liquide
Clement Lansalot-MatrasAir Liquide
Christian DussarratAir Liquide

Films

Plasma Cu

Hardware used: TEL Phoenix CVD cluster tool
Cuprum
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range = 85-100C

Plasma Cu

Hardware used: TEL Phoenix CVD cluster tool
Abacus
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range = 60-100C

Film/Plasma Properties

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss LEO 1550

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: Perkin Elmer 660

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Signatone QuadPro S-A8

Substrates

SiO2

Notes

719