Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing

Type:
Journal
Info:
Microelectronic Engineering 147 (2015) 239 - 243
Date:
2015-04-08

Author Information

Name Institution
Seung Chan HeoHanyang University
Donghwan LimHanyang University
Woo Suk JungHanyang University
Rino ChoiInha University
Hyun-Yong YuKorea University
Changhwan ChoiHanyang University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

4H n-SiC(0001)

Keywords

Notes

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