Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces

Publication Information

Title: Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces

Type: Journal

Info: Journal of The Electrochemical Society, 152 (2) C60-C64 (2005)

Date: 2004-07-12

DOI: http://dx.doi.org/10.1149/1.1850340

Author Information

Name

Institution

Christopher Jezewski

State University of New York at Albany

State University of New York at Albany

Christopher J. Wiegand

Rensselaer Polytechnic Institute (RPI)

Rensselaer Polytechnic Institute (RPI)

Rensselaer Polytechnic Institute (RPI)

Jay J. Senkevich

Rensselaer Polytechnic Institute (RPI)

Rensselaer Polytechnic Institute (RPI)

Films

Plasma Cu using Custom ICP

Deposition Temperature Range = 75-450C

Cu(TMHD)₂, bis(2,2,6,6-tetramethyl-3,5-heptanedionate) copper

14040-05-2

Where to buy precursor

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Density

RBS, Rutherford Backscattering Spectrometry

-

Thickness

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Microstructure

TEM, Transmission Electron Microscope

Philips CM12

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

Philips CM12

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Veeco Autoprobe CP

Adhesion

Scotch Tape Test

-

Substrates

Ta

SiO₂

Au

TaN

Keywords

Notes

1170

Shortcuts

Films

Deposition Hardware

Film and Plasma Characteristics

Multi-factor Search

ALD and PEALD Background

On-line PEALD Theses

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