Inductively Coupled Hydrogen Plasma-Assisted Cu ALD on Metallic and Dielectric Surfaces

Type:
Journal
Info:
Journal of The Electrochemical Society, 152 (2) C60-C64 (2005)
Date:
2004-07-12
DOI:
http://dx.doi.org/10.1149/1.1850340

Author Information

Name Institution
Christopher JezewskiState University of New York at Albany
W. A. LanfordState University of New York at Albany
Christopher J. WiegandRensselaer Polytechnic Institute (RPI)
J. P. SinghRensselaer Polytechnic Institute (RPI)
Pei-I WangRensselaer Polytechnic Institute (RPI)
Jay J. SenkevichRensselaer Polytechnic Institute (RPI)
Toh-Ming LuRensselaer Polytechnic Institute (RPI)

Films

Plasma Cu

Hardware used: Custom Remote Inductively Coupled Plasma
Cu(TMHD)2, Cu(THD)2, bis(2,2,6,6-tetramethyl-3,5-heptanedionate) copper, Copper(II) dipivaloylmethanate
CAS#: 14040-05-2
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range = 75-450C

Film/Plasma Properties

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: Philips CM12

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: Philips CM12

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco Autoprobe CP

Characteristic: Adhesion
Analysis: Tape Test
Diagnostic: -

Substrates

Ta
SiO2
Au
TaN

Keywords

Notes

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