Publication Information

Title: Direct Plating of Cu on Pd Plasma Enhanced Atomic Layer Deposition Coated TaN Barrier

Type: Journal

Info: Electrochemical and Solid-State Letters, 10 (1) D13-D16 (2007)

Date: 2006-08-22

DOI: http://dx.doi.org/10.1149/1.2388249

Author Information

Name

Institution

Rensselaer Polytechnic Institute (RPI)

Rensselaer Polytechnic Institute (RPI)

Rensselaer Polytechnic Institute (RPI)

Rensselaer Polytechnic Institute (RPI)

Films

Plasma Pd using Custom ICP

Deposition Temperature = 85C

64916-48-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

RBS, Rutherford Backscattering Spectrometry

-

Adhesion

Tape Test

Custom

Resistivity, Sheet Resistance

Four-point Probe

-

Substrates

TaN

Keywords

Seed Layer

Notes

1320



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