Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer

Type:
Journal
Info:
Thin Solid Films 521 (2012) 146-149
Date:
2012-02-10

Author Information

Name Institution
Dae-Young MoonHanyang University
Dong-Suk HanHanyang University
Jae-Hyung ParkHanyang University
Sae-Young ShinHanyang University
Jong-Wan ParkHanyang University
Baek Mann KimHynix Semiconductor
Jun Yeol ChoHynix Semiconductor

Films

Plasma Cu



Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Microstructure
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Interfacial Layer
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Adhesion
Analysis: Tape Test

Substrates

SiO2

Keywords

Notes

1591