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Plasma-enhanced atomic layer deposition of Cu–Mn films with formation of a MnSixOy barrier layer
Type:
Journal
Info:
Thin Solid Films 521 (2012) 146-149
Date:
2012-02-10
Author Information
| Name | Institution |
|---|---|
| Dae-Young Moon | Hanyang University |
| Dong-Suk Han | Hanyang University |
| Jae-Hyung Park | Hanyang University |
| Sae-Young Shin | Hanyang University |
| Jong-Wan Park | Hanyang University |
| Baek Mann Kim | Hynix Semiconductor |
| Jun Yeol Cho | Hynix Semiconductor |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Microstructure
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Interfacial Layer
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Adhesion
Analysis: Tape Test
Substrates
| SiO2 |
Notes
| 1591 |