Publication Information

Title: Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization

Type: Journal

Info: Thin Solid Films 590 (2015) 311 - 317

Date: 2015-05-19

DOI: http://dx.doi.org/10.1016/j.tsf.2015.05.033

Author Information

Name

Institution

Yeungnam University

Yeungnam University

Yeungnam University

Yeungnam University

Korea Aerospace University

Yeungnam University

Films

Plasma TiC using Unknown

Deposition Temperature Range = 200-400C

36945-13-8

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

Unknown

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Diffusion Barrier Properties

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Unknown

Substrates

SiO2

Keywords

Diffusion Barrier

Interconnect

Notes

521



Shortcuts



© 2014-2018 plasma-ald.com