Publication Information

Title:
Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization
Type:
Journal
Info:
Thin Solid Films 590 (2015) 311 - 317
Date:
2015-05-19

Author Information

Name Institution
Sang-Kyung ChoiYeungnam University
Hangil KimYeungnam University
Junbeam KimYeungnam University
Taehoon CheonYeungnam University
Jong Hyun SeoKorea Aerospace University
Soo-Hyun KimYeungnam University

Films

Plasma TiC


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Diffusion Barrier Properties
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Substrates

SiO2

Keywords

Diffusion Barrier
Interconnect

Notes

521