Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization

Type:
Journal
Info:
Thin Solid Films 590 (2015) 311 - 317
Date:
2015-05-19
DOI:
http://dx.doi.org/10.1016/j.tsf.2015.05.033

Author Information

Name Institution
Sang-Kyung ChoiYeungnam University
Hangil KimYeungnam University
Junbeam KimYeungnam University
Taehoon CheonYeungnam University
Jong Hyun SeoKorea Aerospace University
Soo-Hyun KimYeungnam University

Films

Plasma TiC

Hardware used: Unknown
Tetrakis (neopentyl) Titanium, ((CH3)3CCH2)4Ti
CAS#: 36945-13-8
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range = 200-400C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Substrates

SiO2

Notes

521