Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3

Type:
Journal
Info:
Nano Energy 43 (2018) 259-269
Date:
2017-11-18
DOI:
https://doi.org/10.1016/j.nanoen.2017.11.047

Author Information

Name Institution
Kwangeun KimUniversity of Wisconsin - Madison
Mengyuan HuaHong Kong University of Science and Technology
Dong LiuUniversity of Wisconsin - Madison
Jisoo KimUniversity of Wisconsin - Madison
Kevin J. ChenHong Kong University of Science and Technology
Zhenqiang MaUniversity of Wisconsin - Madison

Films

Plasma AlN

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 300C

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Valence Band Offset
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Core Energy Levels
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

GaN

Notes

Al2O3 listed as PEALD with TMA and H2O, which is not unheard of, but would typically be given additional clarification.
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