Publication Information

Title:
Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al2O3
Type:
Journal
Info:
Nano Energy 43 (2018) 259-269
Date:
2017-11-18

Author Information

Name Institution
Kwangeun KimUniversity of Wisconsin - Madison
Mengyuan HuaHong Kong University of Science and Technology
Dong LiuUniversity of Wisconsin - Madison
Jisoo KimUniversity of Wisconsin - Madison
Kevin J. ChenHong Kong University of Science and Technology
Zhenqiang MaUniversity of Wisconsin - Madison

Films

Plasma AlN


Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Valence Band Offset
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Core Energy Levels
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

GaN

Keywords

Photoluminescence

Notes

Al2O3 listed as PEALD with TMA and H2O, which is not unheard of, but would typically be given additional clarification.
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