Alloyed 2D Metal-Semiconductor Atomic Layer Junctions

Type:
Journal
Info:
Nano Lett., 2016, 16 (3), pp 1890-1895
Date:
2016-02-03
DOI:
http://dx.doi.org/10.1021/acs.nanolett.5b05036

Author Information

Name Institution
Ah Ra KimKorea Institute of Materials Science
Yong Hun KimKorea Institute of Materials Science
Jaewook NamSungkyunkwan University
Hee-Suk ChungKorean Basic Science Institute
Dong Jae KimSungkyunkwan University
Jung-Dae KwonKorea Institute of Materials Science
Sang Won ParkKorea Institute of Materials Science
Jucheol ParkFuture Strategy Research Institute
Sun Young ChoiKorea Institute of Materials Science
Byoung Hun LeeGwanju Institute of Science and Technology (GIST)
Ji Hyeon ParkUniversity of Ulsan
Kyu-Hwan LeeKorea Institute of Materials Science
Dong-Ho KimKorea Institute of Materials Science
Sung Mook ChoiKorea Institute of Materials Science
Pulickel M AjayanRice University
Myung Gwan HahmInha University
Byung-Jin ChoKorea Institute of Materials Science

Films

Plasma Nb2O5

Hardware used: Custom
Niobium Pentafluoride, Niobium(V) fluoride, NbF5
CAS#: 7783-68-8
H2, Hydrogen
CAS#: 1333-74-0

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O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

WO3

Notes

PEALD details in supplementary information.
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