Publication Information

Title:
Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 041504 (2016)
Date:
2016-05-09

Author Information

Name Institution
Jun Beom KimYeungnam University
Soo-Hyun KimYeungnam University
Won Seok HanUP Chemical
Do-Joong LeeBrown University

Films

Plasma WC


Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Work Function
Analysis: UPS, Ultraviolet Photoemission Spectroscopy

Characteristic: Diffusion Barrier Properties
Analysis: Custom

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

843