Publication Information

Title: Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization

Type: Journal

Info: Journal of Vacuum Science & Technology A 34, 041504 (2016)

Date: 2016-05-09

DOI: http://dx.doi.org/10.1116/1.4951691

Author Information

Name

Institution

Yeungnam University

Yeungnam University

UP Chemical

Brown University

Films

Deposition Temperature Range = 150-350C

12131-66-7

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

-

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Density

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Conformality, Step Coverage

TEM, Transmission Electron Microscope

FEI Technai F20

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Work Function

UPS, Ultraviolet Photoemission Spectroscopy

-

Diffusion Barrier Properties

Custom

Custom

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

843



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