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Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors
Reaction Mechanisms during Atomic Layer Deposition of AlF3 Using Al(CH3)3 and SF6 Plasma
Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
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Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
Type:
Other
Info:
Final technical report to Office of the Chief of Naval Research
Date:
1996-09-01
Author Information
| Name | Institution |
|---|---|
| R. F. Davis | North Carolina State University |
| S. Bedair | North Carolina State University |
| N. A. El-Masry | North Carolina State University |
| Z. Sitar | North Carolina State University |
Films
Film/Plasma Properties
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Silicon |
Keywords
Notes
| 1192 |