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Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
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Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
Type:
Other
Info:
Final technical report to Office of the Chief of Naval Research
Date:
1996-09-01
Author Information
| Name | Institution |
|---|---|
| R. F. Davis | North Carolina State University |
| S. Bedair | North Carolina State University |
| N. A. El-Masry | North Carolina State University |
| Z. Sitar | North Carolina State University |
Films
Film/Plasma Properties
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Silicon |
Keywords
Notes
| 1192 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |