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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization
Type:
Other
Info:
Final technical report to Office of the Chief of Naval Research
Date:
1996-09-01
Author Information
| Name | Institution |
|---|---|
| R. F. Davis | North Carolina State University |
| S. Bedair | North Carolina State University |
| N. A. El-Masry | North Carolina State University |
| Z. Sitar | North Carolina State University |
Films
Film/Plasma Properties
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Silicon |
Keywords
Notes
| 1192 |