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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
TEA, Al(C2H5)3, AlEt3, Triethyl Aluminum, CAS# 97-93-8
Where to buy
| Number | Vendor | Region | Link |
|---|---|---|---|
| 1 | DOCK/CHEMICALS | 🇩🇪 | Triethylaluminum |
| 2 | Strem Chemicals, Inc. | 🇺🇸 | Triethylaluminum, min. 93% |
| 3 | Sigma-Aldrich, Co. LLC | 🇺🇸 | Triethylaluminum 93% |
| 4 | Strem Chemicals, Inc. | 🇺🇸 | Triethylaluminum, elec. gr. (99.999+%-Al) PURATREM **S.Steel Cyl Extra** |
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Plasma Enhanced Atomic Layer Deposition Film Publications
Your search for publications using this chemistry returned 1 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.
| Number | Title |
|---|---|
| 1 | Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization |