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Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier
Self-limiting diamond growth from alternating CFx and H fluxes
Sub-10-nm ferroelectric Gd-doped HfO2 layers
TEA, Al(C2H5)3, AlEt3, Triethyl Aluminum, CAS# 97-93-8
Where to buy
| Number | Vendor | Region | Link |
|---|---|---|---|
| 1 | Strem Chemicals, Inc. | 🇺🇸 | Triethylaluminum, min. 93% |
| 2 | Pegasus Chemicals | 🇬🇧 | Triethylaluminium |
| 3 | Strem Chemicals, Inc. | 🇺🇸 | Triethylaluminum, elec. gr. (99.999+%-Al) PURATREM **S.Steel Cyl Extra** |
| 4 | Sigma-Aldrich, Co. LLC | 🇺🇸 | Triethylaluminum 93% |
| 5 | DOCK/CHEMICALS | 🇩🇪 | Triethylaluminum |
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Plasma Enhanced Atomic Layer Deposition Film Publications
Your search for publications using this chemistry returned 1 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.
| Number | Title |
|---|---|
| 1 | Atomic Layer Epitaxy of Group IV Materials: Surface Processes, Thin Films, Devices and Their Characterization |