Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices
Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2014 volume 3, issue 5, P159-P162
Date:
2014-03-18
Author Information
| Name | Institution |
|---|---|
| Chi-Chen Huang | National Tsing Hua University |
| Chong-Lung Ho | National Tsing Hua University |
| Shang-Fu Chen | National Tsing Hua University |
| Yung-Fu Chang | National Tsing Hua University |
| Meng-Chyi Wu | National Tsing Hua University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Profilometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Characteristic: Carrier Concentration
Analysis: Hall Measurements
Characteristic: Mobility
Analysis: Hall Measurements
Characteristic: Transmittance
Analysis: Optical Transmission
Characteristic: Optical Absorption
Analysis: Optical Absorption
Characteristic: LED Light Emission
Analysis: Custom
Characteristic: Dark Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Photocurrent
Analysis: I-V, Current-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Sapphire |
Notes
| 1383 |