Characteristics of ALD-GZO Films with Driven-in Zn and Zn/Mg Sources for the Applications to Optoelectronic Devices

Type:
Journal
Info:
ECS J. Solid State Sci. Technol. 2014 volume 3, issue 5, P159-P162
Date:
2014-03-18

Author Information

Name Institution
Chi-Chen HuangNational Tsing Hua University
Chong-Lung HoNational Tsing Hua University
Shang-Fu ChenNational Tsing Hua University
Yung-Fu ChangNational Tsing Hua University
Meng-Chyi WuNational Tsing Hua University

Films

Thermal Ga:ZnO


Plasma Ga:ZnO


Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements

Characteristic: Carrier Concentration
Analysis: Hall Measurements

Characteristic: Mobility
Analysis: Hall Measurements

Characteristic: Transmittance
Analysis: Optical Transmission

Characteristic: Optical Absorption
Analysis: Optical Absorption

Characteristic: LED Light Emission
Analysis: Custom

Characteristic: Dark Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Photocurrent
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Sapphire

Notes

1383