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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 050605 (2016)
Date:
2016-08-17
DOI:
http://dx.doi.org/10.1116/1.4961885

Author Information

Name Institution
Triratna MuneshwarUniversity of Alberta
Gem ShouteUniversity of Alberta
Douglas W. BarlageUniversity of Alberta
Kenneth C. CadienUniversity of Alberta

Films

Plasma ZnO

Hardware used: Kurt J Lesker ALD-150LX
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 40-250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Characteristic: Resistivity, Sheet Resistance
Analysis: van der Pauw sheet resistance
Diagnostic: Keithley 4200-SCS

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

Si(100)

Notes

896