Tetraallyltin precursor for plasma enhanced atomic layer deposition of tin oxide: Growth study and material characterization

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 030601 (2019)
Date:
2019-03-20
DOI:
http://dx.doi.org/10.1116/1.5091944

Author Information

Name Institution
Triratna MuneshwarUniversity of Alberta
Douglas W. BarlageUniversity of Alberta
Kenneth C. CadienUniversity of Alberta

Films

Plasma SnO2

Hardware used: Kurt J Lesker ALD-150LX
TASn, TetraAllylTin, (H2C=CHCH2)2Sn
CAS#: 7393-43-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-150C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Rigaku Ultima IV

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: Nanometrics HL5500

Characteristic: Carrier Concentration
Analysis: Hall Measurements
Diagnostic: Nanometrics HL5500

Characteristic: Mobility
Analysis: Hall Measurements
Diagnostic: Nanometrics HL5500

Substrates

Si(100)
SiO2

Notes

1540