Title: Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
Type: Journal
Info: Applied Surface Science 282 (2013) 390 - 395
Date: 2013-05-28
DOI: http://dx.doi.org/10.1016/j.apsusc.2013.05.141
Name
Institution
Zhejiang University
Zhejiang University
Zhejiang University
Zhejiang University
Zhejiang University
Characteristic
Analysis
Diagnostic
Resistivity, Sheet Resistance
Hall effect/van der Pauw method
BIO-RAD HL5500
Electron Mobility
Hall effect/van der Pauw method
BIO-RAD HL5500
Carrier Concentration
Hall effect/van der Pauw method
BIO-RAD HL5500
Thickness
Ellipsometry
J.A. Woollam M-2000
Thickness
SEM, Scanning Electron Microscopy
FEI Sirion-100
Morphology, Roughness, Topography
SEM, Scanning Electron Microscopy
FEI Sirion-100
Crystallinity, Crystal Structure, Grain Size, Atomic Structure
XRD, X-Ray Diffraction
PANalytical Empyrean
Photoluminescence
PL, PhotoLuminescence
Acton SpectroPro SP-2500
Leakage Current
I-V, Current-Voltage Measurements
Agilent 4155C Semiconductor Parameter Analyzer
Breakdown Voltage
I-V, Current-Voltage Measurements
Agilent 4155C Semiconductor Parameter Analyzer
Si(100)
Glass
Resistive Switch
602
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