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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Applied Surface Science 282 (2013) 390 - 395
Date:
2013-05-28
Author Information
| Name | Institution |
|---|---|
| Jian Zhang | Zhejiang University |
| Hui Yang | Zhejiang University |
| Qi-long Zhang | Zhejiang University |
| Shurong Dong | Zhejiang University |
| J.K. Luo | Zhejiang University |
Films
Plasma ZnO
Thermal ZnO
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: Hall effect/van der Pauw method
Characteristic: Electron Mobility
Analysis: Hall effect/van der Pauw method
Characteristic: Carrier Concentration
Analysis: Hall effect/van der Pauw method
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
| Glass |
Keywords
| Resistive Switch |
Notes
| 602 |