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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Applied Surface Science 282 (2013) 390 - 395
Date:
2013-05-28
Author Information
| Name | Institution |
|---|---|
| Jian Zhang | Zhejiang University |
| Hui Yang | Zhejiang University |
| Qi-long Zhang | Zhejiang University |
| Shurong Dong | Zhejiang University |
| J.K. Luo | Zhejiang University |
Films
Plasma ZnO
Thermal ZnO
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: Hall effect/van der Pauw method
Characteristic: Electron Mobility
Analysis: Hall effect/van der Pauw method
Characteristic: Carrier Concentration
Analysis: Hall effect/van der Pauw method
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
| Glass |
Notes
| 602 |