Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Applied Surface Science 282 (2013) 390 - 395
Date:
2013-05-28

Author Information

Name Institution
Jian ZhangZhejiang University
Hui YangZhejiang University
Qi-long ZhangZhejiang University
Shurong DongZhejiang University
J.K. LuoZhejiang University

Films

Plasma ZnO


Thermal ZnO


Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall effect/van der Pauw method

Characteristic: Electron Mobility
Analysis: Hall effect/van der Pauw method

Characteristic: Carrier Concentration
Analysis: Hall effect/van der Pauw method

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)
Glass

Keywords

Resistive Switch

Notes

602