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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
Type:
Journal
Info:
Nature Communications, v. 7 (2016)
Date:
2016-01-06
Author Information
| Name | Institution |
|---|---|
| Gem Shoute | University of Alberta |
| Amir Afshar | University of Alberta |
| Triratna Muneshwar | University of Alberta |
| Kenneth C. Cadien | University of Alberta |
| Douglas W. Barlage | University of Alberta |
Films
Thermal ZnO
Plasma HfO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Silicon |
| ZnO |
Keywords
Notes
| 764 |