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Publication Information

Title: Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

Type: Journal

Info: Nature Communications, v. 7 (2016)

Date: 2016-01-06

DOI: http://dx.doi.org/10.1038/ncomms10632

Author Information

Name

Institution

Gem Shoute

University of Alberta

Amir Afshar

University of Alberta

Triratna Muneshwar

University of Alberta

Ken Cadien

University of Alberta

Douglas W. Barlage

University of Alberta

Films

Thermal ZnO using Kurt J Lesker ALD-150LX

Deposition Temperature = 130C

DEZ, DiEthyl Zinc, ZnEt2, Zn(C2H5)2

557-20-0

Where to buy precursor

Water, H2O

7732-18-5

Plasma HfO2 using Kurt J Lesker ALD-150LX

Deposition Temperature = 100C

TDMAH, TDMAHf, Tetrakis[DiMethylAmido]Hafnium, Tetrakis[DiMethylAmino]Hafnium, Hafnium Dimethylamide, [Me2N]4Hf, [(CH3)2N]4Hf, also CAS# 19782-68-4

19962-11-9

Where to buy precursor

Oxygen, O2

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000DI

Transistor Characteristics

Transistor Characterization

Unknown

Substrates

Silicon

ZnO

Keywords

Notes

764

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. If you know of publications I have missed or a database entry is wrong, send me an email at: marksowa@plasma-ald.com

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