Publication Information

Title:
Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
Type:
Journal
Info:
Nature Communications, v. 7 (2016)
Date:
2016-01-06

Author Information

Name Institution
Gem ShouteUniversity of Alberta
Amir AfsharUniversity of Alberta
Triratna MuneshwarUniversity of Alberta
Ken CadienUniversity of Alberta
Douglas W. BarlageUniversity of Alberta

Films

Thermal ZnO



Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Silicon
ZnO

Keywords

Notes

764