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Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current

Type:
Journal
Info:
Nature Communications, v. 7 (2016)
Date:
2016-01-06
DOI:
http://dx.doi.org/10.1038/ncomms10632

Author Information

Name Institution
Gem ShouteUniversity of Alberta
Amir AfsharUniversity of Alberta
Triratna MuneshwarUniversity of Alberta
Kenneth C. CadienUniversity of Alberta
Douglas W. BarlageUniversity of Alberta

Films

Thermal ZnO

Hardware used: Kurt J Lesker ALD-150LX
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 130C

Plasma HfO2

Hardware used: Kurt J Lesker ALD-150LX
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000DI

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

Silicon
ZnO

Notes

764