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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
Search 1573 plasma ALD publications by:
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Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
Type:
Journal
Info:
Nature Communications, v. 7 (2016)
Date:
2016-01-06
Author Information
| Name | Institution |
|---|---|
| Gem Shoute | University of Alberta |
| Amir Afshar | University of Alberta |
| Triratna Muneshwar | University of Alberta |
| Kenneth C. Cadien | University of Alberta |
| Douglas W. Barlage | University of Alberta |
Films
Thermal ZnO
Plasma HfO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Silicon |
| ZnO |
Keywords
Notes
| 764 |