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Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time

Type:
Journal
Info:
Journal of The Electrochemical Society, 158 (6) G141-G145 (2011)
Date:
2011-03-03
DOI:
http://dx.doi.org/10.1149/1.3569751

Author Information

Name Institution
Young-Chul ByunSungkyunkwan University
Chee-Hong AnSungkyunkwan University
Ju Yun ChoiSungkyunkwan University
Chung Yi KimYonsei University
Mannho ChoYonsei University
Hyoungsub KimSungkyunkwan University

Films

Plasma HfO2

Hardware used: Custom Remote Inductively Coupled Plasma
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Frequency Dispersion
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Custom

Substrates

GaAs

Notes

1359