Publication Information

Title:
Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O2 with Different (NH4)2S Cleaning Time
Type:
Journal
Info:
Journal of The Electrochemical Society, 158 (6) G141-G145 (2011)
Date:
2011-03-03

Author Information

Name Institution
Young-Chul ByunSungkyunkwan University
Chee-Hong AnSungkyunkwan University
Ju Yun ChoiSungkyunkwan University
Chung Yi KimYonsei University
Mannho ChoYonsei University
Hyoungsub KimSungkyunkwan University

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Frequency Dispersion
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

GaAs

Keywords

Notes

1359