Publication Information

Title: Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing

Type: Journal

Info: Appl. Phys. Lett. 103, 263115 (2013)

Date: 2013-12-12

DOI: http://dx.doi.org/10.1063/1.4858964

Author Information

Name

Institution

University of California - San Diego

University of California - San Diego

University of California - San Diego

Films

Plasma Pt using Picosun R200

Deposition Temperature = 300C

94442-22-5

7782-44-7

Plasma Pt using Picosun R200

Deposition Temperature = 300C

94442-22-5

7782-44-7

75-24-1

Thermal HfO2 using Picosun R200

Deposition Temperature = 200C

19962-11-9

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

-

Images

SEM, Scanning Electron Microscopy

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Kratos Analytical Axis Ultra DLD

Resistivity, Sheet Resistance

TLM, Transmission Line Measurement

-

Thickness

TEM, Transmission Electron Microscope

FEI Tecnai G2 F30

Interfacial Layer

TEM, Transmission Electron Microscope

FEI Tecnai G2 F30

Transistor Characteristics

Unknown

-

Substrates

SiO2

HfO2

Keywords

PEALD Film Development

Nanowire Transistors

Nucleation

Notes

Picosun SUNALE R-200 Pt with reduced nucleation delay through TMA prepulse optimization.

170



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