Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET

Type:
Journal
Info:
Journal of Materials Science: Materials in Electronics volume 30, pages 20360-20368 (2019)
Date:
2019-10-28

Author Information

Name Institution
Rajesh Kumar JhaIndian Institute of Information Technology-Allahabad
Prashant SinghIndian Institute of Information Technology-Allahabad
Manish GoswamiIndian Institute of Information Technology-Allahabad
B. R. SinghIndian Institute of Information Technology-Allahabad

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometric Porosimetry (EP)

Characteristic: Refractive Index
Analysis: Ellipsometric Porosimetry (EP)

Characteristic: Extinction Coefficient
Analysis: Ellipsometric Porosimetry (EP)

Characteristic: Ferroelectricity
Analysis: Ferroelectrical Testing

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Keywords

Ferroelectrics

Notes

1648