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Publication Information

Title: Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications

Type: Journal

Info: Thin Solid Films (2015)

Date: 2015-11-16

DOI: http://dx.doi.org/10.1016/j.tsf.2015.11.037

Author Information

Name

Institution

National Research Council (CNR - Italy)

National Research Council (CNR - Italy)

National Research Council (CNR - Italy)

National Research Council (CNR - Italy)

National Research Council (CNR - Italy)

Films

Plasma Al2O3 using SENTECH

Deposition Temperature = 300C

75-24-1

7782-44-7

Plasma HfO2 using SENTECH

Deposition Temperature = 300C

19962-11-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Silicon

Keywords

Notes

499


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